Temperature stable high energy density capacitors using complex perovskite thin films

Abstract

Chemical solution derived thin film synthesis and dielectric characterizations of (1-x)BaTiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> -xBi(Mg,Ti)O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> complex perovskiteswith compositions x<;0.15 have been explored for temperature stable high energy density capacitor applications. Solution chemistry has been optimized to synthesize and stabilize the precursor solution. Solution derived (1-x)BaTiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> -xBi(Mg,Ti)O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> thin film samples were fabricated in thickness ~500 nm by spinning and subsequent crystallization. These thin films showed nearly linear polarization response with high relative dielectric permittivity exceeds 900, that is beneficial to high capacitance density and energy density of the capacitors. Average dielectric breakdown strengths of the dense films were as high as 2.17 MV/cm. The BaTiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> -Bi(Mg,Ti)O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> samples showed very low leakage current densities in magnitudes of 10-8 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> order even at high temperatures up to 200°C. Based on the structural stability at high temperatures of the pseudocubic perovskite, the high dielectric permittivity and the typical P-E behaviors of the BaTiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> -Bi(Mg,Ti)O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> thin films were also maintained at such high temperatures. Resulting energy density of the 500 nm thick 0.88BaTiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> -0.12Bi(Mg,Ti)O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> thin film was as high as 37 J/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> at 1.9 MV/cm. The enormous energy density and high temperature stability of the BaTiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> -Bi(Mg,Ti)O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> complex perovskite promise its applications in high temperature pulse power capacitors.