Abstract
We have investigated the temperature, T, dependence of a highly sensitive far-infrared (FIR) photodetector fabricated on a two-dimensional electron gas system in GaAs/AlGaAs heterostructures. The photoinduced resistance change, ΔRxx, observed in different integer quantum Hall (QH) regimes shows different T dependences. At high T, ΔRxx is limited by the vanishing of rising electronic temperature ΔTe. For T < 5 K, ΔRxx can either rapidly increase with lower T or slowly diminish, determined by the interplay between the magnetic field dependence of ΔTe and the T dependence of QH states.
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