Abstract
We have studied the electronic structures in a wide temperature range for the Si(111) surface using photoemission spectroscopy combined with the laser annealing method. The temperature dependence of the Si 2p surface-sensitive core level photoemission spectra shows some gradual changes along with the thermal broadening above ~1063 K. In addition, the spectral change in the valence band photoemission spectra was also observed across the 7 × 7–1 × 1 transition temperature. These results indicate that the surface band structure is changed along with structural change at the 7 × 7–1 × 1 transition temperature. With increase of the temperature, the shift of the Si 2p core-level photoemission spectra to the lower binding energy side was observed. We discuss the temperature-induced effects such as the thermal broadening and the observed shift.
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