Abstract
ABSTRACTDespite the crowd of germanium (Ge), antimony (Sb) and tellurium (Te) based chalcogenide alloys discovered since 1960, most of the research has been focussed on Ge2Sb2Te5, Ge1Sb2Te4 and Ge1Sb4Te7. In this article, we present an extensive opto-electronic study of an accidentally discovered composition, i.e. Ge2.53Sb4.89Te2.50. We examined it through energy-dispersive spectroscopy, optical spectroscopy, X-ray diffraction and conductivity measurements with and without annealing. A phase transition from amorphous to crystalline phase was observed at a phase transition temperature of 160°C and threshold voltage of 1 V. A resistance contrast of the order of 103 ohms was witnessed due to the combined effect of an initial constant voltage and augmentation in temperature. The thermal activation energies were calculated for different temperature ranges and explained according to theoretical models of conduction. The optical bandgap decreased for annealed samples as compared to as-deposited ones, which is indicative of its energy conservation applications.
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