Abstract
The capture cross sections of both electrons σn and holes σp were determined for the defect formed by interstitial molybdenum in crystalline silicon over the temperature range -110 to 0 o C. Carrier lifetime measurements were performed on molybdenum-contaminated silicon using a temperature controlled photoconductance instrument. Injection dependent lifetime spectroscopy was applied at each temperature to calculate σn and σp. This analysis involved a novel approach that independently determined the capture cross sections assuming a known defect density and thermal velocity. Both σn and σp were found to decrease with temperature in a fashion consistent with excitonic
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