Abstract
The temperature dependence in the typical temperature operating range from 300K up to 370K of the electrical characteristics of IGZO TFTs fabricated at temperatures not exceeding 200°C is presented and modeled.It is seen that up to T=330K, the transfer curves show a parallel shift toward more negative voltages. In both subthreshold and above threshold regimes, the drain current shows Arrhenius-type dependence. In the latter case, for low temperatures, the activation energy is around 0.35eV for VGS=10V, reducing as VGS is increased. The observed behavior is consistent with having the VRH transport mechanism as the predominant one in conduction.
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