Abstract
An energy-resolved DLTS technique was used to determine the distributions of both interface trap density and thermal capture cross section along the bandgap of an MOS structure. The resulting experimental values are criticized and tested in comparison with those obtained from a conventional a.c. conductance technique applied on the same diode. In this respect, incomplete filling of traps has an important effect on the interface trap density distribution. Furthermore, experimental measurements indicate that the capture cross section strongly depends on temperature, which might be interpreted as being due to a multiphonon emission process.
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