Abstract
The temperature dependence of reverse breakdown voltage ( V RB) and forward turn-on voltage ( V F) of GaN Schottky diode rectifiers is reported. The V RB values display a negative temperature coefficient (−0.92 V K −1 for 25–50°C; −0.17 V K −1 for 50−150°C), indicative of surface- or defect-assisted breakdown. The V F values decrease with increasing temperature. The room temperature breakdown voltage is approximately a factor of three lower than the theoretical maximum expected based on avalanche breakdown, and the current performance of GaN rectifiers is comparable to that of Si at the same on-resistance.
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