Abstract
The conduction type of boron (B)-doped silicon (Si) changes from p type into n type by the 1×1017 cm−2 fluence irradiation (high-fluence irradiation) of 1 MeV electrons. The temperature dependence of the electron concentration n(T) obtained from Hall-effect measurements is reported. From the analysis of n(T), the density and energy level of the defects created by the high-fluence irradiation are determined to be 1.5×1014 cm−3 and EC−0.30 eV, respectively, where EC is the energy level at the bottom of the conduction band. Moreover, the compensated density is 9.5×1013 cm−3, which is in agreement with the density of B that acts as an acceptor, determined by Fourier-transform infrared spectroscopy.
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