Abstract
Avalanche breakdown voltage has been measured in a series of AlxGa1−xAs(0<x<0.8)p+in+ and n+ip+ diodes at temperatures between 20 and 500K. The temperature sensitivity falls with decreasing avalanche region width for all alloy compositions, with a minimum sensitivity at x=0.6, for which we offer a physical explanation. While Monte Carlo simulations show that alloy scattering reduces the temperature dependence of breakdown voltage, the effect is too small to account for the observations.
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