Abstract
Based on an analysis of differences between the experimentally measured temperature dependence of the current-voltage characteristic (I-V curve) of a laser diode bar (LDB) with AlGaAs/GaAs heterostructure and the dependence obtained in accordance with the well-known model of light-emitting diodes, assumptions were made about the sources of these differences. The agreement between the experimental and modeled dependences is significantly improved by taking into consideration the change in the resistance of LDB layers caused by temperature change. It is shown that when the injection current is known, the measured voltage drop across the LDB can be used to estimate the temperature of the diode active region in order to implement thermal stabilization for solid-state laser pumping systems based on high-power laser diodes.
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