Abstract
Temperature characteristics of the light emission in blue InGaN/GaN quantum well (QW) structures were investigated using the multiband effective mass theory. The light emission intensity decreases gradually with increasing temperature because of the reduction in the optical matrix element due to the decrease in the potential well depth. On the other hand, the spillover is shown to be negligible in the investigated range of temperature and the T0 value of about 255 K is obtained. The radiative recombination coefficient Beff decreases from 0.3 × to 0.2×10−4 cm6/s at the sheet carrier density of 5×1012 cm−2 when changing from 300 to 400 K. As a result, the internal efficiency is reduced with increasing temperature because of the reduction in the radiative recombination rate.
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