Abstract
The design and operation of a near infra-red resonant cavity light-emitting diode operating at 1.7 microns with a 16 nm linewidth is described. The structure is based on a wafer-bonded combination of InGaAs/InAlAs/InP quantum well emitter and an AlAs/GaAs distributed Bragg reflector. Detailed temperature characteristics over a range from 80 to 373 K are presented. The temperature dependence of the main cavity mode emission wavelength is shown to be 0.15 nm/K. The intensity is found to increase with temperature from 80 to 325 K and thereafter decrease. There is a 20 degree range in which the intensity is constant within approximately 5%. A model is suggested for this behaviour.
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