Abstract
Nickel silicide ohmic contacts to 4H n-SiC were investigated using electron microscopy. Ni/Si multilayer structures were fabricated using magnetron sputtering technique. The Ni to Si layer thickness ratio was chosen to achieve the stoichiometry of Ni2Si phase. The deposited structure was subjected to a two-step annealing procedure. First annealing step was performed at 600C, the second at 1050C or 1100C. Microstructure and morphology after each annealing step were characterized using scanning and transmission electron microscopy. The specific voids and discontinuities of the layer were observed after annealing at high temperature. Phase compositions were investigated with electron diffraction technique. After annealing at 600C the phases Ni2Si, Ni3Si2 and Ni31Si12 were detected. High temperature annealing resulted in the presence of only Ni2Si phase. The influence of phase transformations on the morphology of the contacts is discussed. Explanation of the origin of layer discontinuities is proposed. [doi:10.2320/matertrans.MB201014]
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
