Abstract
In this chapter we will discuss the use of InAs quantum dots for telecom wavelength single photon applications. We will describe two molecular beam epitaxial growth techniques to achieve low density distributions of quantum dots that are large enough to emit telecom wavelength photons at low temperatures. Single dot spectroscopy in conjunction with timeresolved measurements provide information on the origin of the main emission lines. Correlation spectroscopy using both InGaAs avalanche photodiodes and superconducting single photon detectors will be discussed and used to characterize the photon emission statistics. Ungated measurements at telecom wavelengths using the superconducting single photon detectors offer ready access to additional details in the secondorder correlation function. Progress towards practical electrically driven sources will be presented including oxide aperture and planar cavity LEDs. We will see how the inclusion of electrical contacts enables additional exibility in the temporal output of a device by tuning the emission wavelength with time-varying Stark shifts. © 2008 by Pan Stanford Publishing Pte. Ltd. All rights reserved.
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