Abstract
AbstractThin layers of amorphous chalcogenides semiconductors of mixed composition As2(SxSe1‐x)3 for x in the interval 0–1 were obtained from chemical solutions of amorphous compounds arsenic selenide (As2Se3) and arsenic sulfide (As2S2). Their optical properties (optical transmittance and recording of holographic information) were studied. The photodarkening of layers and shift of absorption edge in infrared (IR) area of spectra were found at ultra‐violet (UV) and actinic irradiations. Maximum efficiency of holographic writing of diffraction gratings (with Ar laser recording, λ = 488 nm) on thin layers is 2.5% and after additional processing in the negative etching is 36% (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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