Abstract
A technique to detect two-photon absorption in Si is presented. The light-induced voltage rather than the transmitted light is measured. The sample acts as the detector and the measurement is easy to be carried out. The nonlinear coefficients can be calculated conveniently from experimental data. From the experimental data measured at different light powers and different temperatures, the simultaneous two-photon absorption coefficients at 800nm in Si are calculated to be about 230cm∕MW at 300K and 360cm∕MW at 77K.
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