Abstract

Multiband solar cell is made up of semiconductor materials which has the ability to respond to the sunlight. It is used to improve the efficiency of the recent developing solar cells. This work discusses about how full solar spectrum is utilized by preparing the multiband structure through GaAs thin film. The material is stacked with different band gaps and the layers are created based on the band gap values from bottom to top. The band gap of the GaAs material is 1.4eV and AlGaAs material varies from 1.42–2.16 respectively. The range of efficiency and the performance of the solar cell is determined by the type of semiconductor materials and simulation techniques used in Synopsis TCAD. The structure of single junction multilayer solar cell has been created, The efficiency, Voc, Fill factor and Jsc obtained are 27.29%, 1.076V, 88.72% and 28.6mA/cm2 respectively.

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