Abstract
A comprehensive numerical model which accounts for surface damage effects induced by radiation on silicon particle detectors is presented with reference to the state-of-the-art Synopsys Sentaurus Technology CAD (TCAD) tool. The overall aim of this work is to present the “Perugia 2019 Surface” damage modeling scheme, fully implemented within the TCAD environment, which effectively describes the surface damage effects induced by radiation in silicon sensors relying on a limited number of parameters relevant for physics. To this end, extensive measurement campaigns have been recently performed on gated-diodes and MOS capacitors at Fondazione Bruno Kessler (FBK) in Italy, Hamamatsu Photonics (HPK) in Japan and Infineon Technologies (IFX) in Austria on both n-type and p-type substrates (with and without p-spray isolation implants), in order to extrapolate the relevant parameters which rule the surface damage effects. The integrated interface trap density and the oxide charge density, have been determined before and after X-ray irradiation with doses ranging from 0.05 to 100 Mrad(SiO2), for each specific foundry and technology flavor. The main guidelines of this study are the versatility and generality of the simulation approach.
Highlights
The planned Large Hadron Collider (LHC) upgrade to High Luminosity (HL) requires new generations of tracking detectors which have to efficiently operate in extremely harsh radiation environments [1,2]
The overall aim of this work is to provide a modeling scheme, fully implemented within the Technology CAD (TCAD) environment, which effectively describes the surface damage effects induced by radiation in silicon sensors, relying on a limited number of physics meaningful parameters
Despite the value of interface trap states and the flat-band voltage shifts at increasing irradiation doses are different for the two manufacturing processes, a unique modeling scheme is capable of reproducing the measured data after a proper setting of the oxide charge and interface trap states
Summary
The planned Large Hadron Collider (LHC) upgrade to High Luminosity (HL) requires new generations of tracking detectors which have to efficiently operate in extremely harsh radiation environments [1,2]. The expected fluences and total ionizing doses (TID), integrated over 10 years of operation, are of the order of 2.2·1016 1 MeV neqcm−2 and 1 Grad for the innermost regions of the collider. The outermost layers will reach lower TID in the range of 10–70 Mrad, where evidence of saturation effects for the radiation induced damages are clearly visible. Radiation hardness represents an essential requirement for sensors and the radiation induced damage effects should be investigated with awareness. Combined effects of surface and bulk damage will interplay in a significantly different manner depending on the particle interactions. The trend of the break-down voltage depending on the dose is significantly affected by surface damage effects as well as the isolation in segmented detectors [3]
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