TCAD Based Investigation of Single Event Transient Effect in Double Channel AlGaN/GaN HEMT

Abstract

In this paper, investigation of Double Channel (DC) AlGaN/GaN HEMT has been presented using extensive TCAD simulation under the influence of Single Event Transient (SET) effect. Various models used to emulate Single Channel (SC) and DC HEMT in the TCAD are calibrated with the help of previously reported work. In order to present clear insight into the device behaviour, thermal model has also been included during device simulation. Presented results show that the generation of electron-hole pair due to heavy ion beam is significantly higher in DC HEMT during both OFF and ON state conditions. Ion beam having different Linear Energy Transfer (LET) and different position of Ion strike along with penetration depth has been used for investigating the SET effect on DC and SC AlGaN/GaN HEMT. The suitability of different metal gate work-function for heavy Ion detection has also been performed using both devices and DC HEMT (0.115 A/mm) demonstrated superior \bigtriangleup I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> DMAX</sub> as compared to SC HEMT (0.049 A/mm). The presence of a second channel in Double Channel (DC) HEMT leads to a device more sensitive towards the Single Event Transients (SET) Effect, thus, a more suitable candidate for radiation dosimeter as compared to Single Channel (SC) HEMT.