Abstract
Etch rates of tantalum in tetrafluoromethane-oxygen and hexafluoroethane-oxygen rf glow discharges were measured in situ as functions of pressure, reactor residence time, temperature, and applied plasma power. A dramatic increase in the etch rate was observed as the pressure increased. In addition, two distinct temperature regimes occurred in Arrhenius plots. Such data suggest strong effects due to heat of reaction in the Ta/CF4-O2 etch system. The observed etch-rate pressure dependence can be explained by assuming first-order kinetics for the reaction of fluorine atoms with tantalum. Evidence for etch-rate quenching at high pressures due to an increase in the deposition of an inhibiting fluorocarbon surface layer is presented.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
