Abstract
In this letter, the bi-layered structure of TaN/Ta is revealed to be an effective diffusion barrier for copper (Cu)/NiSi direct contact application. Comparing with the conventional Cu/Ta/TaN/NiSi contact structure, the proposed Cu/TaN/Ta/NiSi contact structure can significantly increase the contact failure temperature over 100°C. It is demonstrated that the NiSi morphological stability is effectively enhanced by Ta capping, which is crucial to improve the performance of Cu/TaN/Ta/NiSi contact. For TaN/Ta diffusion barrier, the Cu diffusion through TaN/Ta layers is revealed to be a diffusion-controlled process with an activation energy of 0.95 eV.
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