Abstract
Phase inversion is demonstrated as an effective method for engineering the microstructure of graphene films by exploiting the well-defined solubility characteristics of polymer dispersants. Drying of a tailored phase inversion ink containing a nonvolatile nonsolvent leads to gelation and subsequent pore formation, providing a promising strategy to tailor the porosity of the resulting graphene films. Graphene films with tunable porosity and electrical conductivity ranging from ∼1000 to ∼22 000 S/m are fabricated by this method. Moreover, this dry phase inversion technique is compatible with conventional coating and printing methods, allowing direct ink writing of porous graphene microsupercapacitor electrodes for energy storage applications. Overall, this method provides a straightforward and versatile strategy for engineering the microstructure of solution-processed nanomaterials.
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