Abstract
AbstractIntegrating perovskite solar cells with crystalline silicon bottom cells in a monolithic two‐terminal tandem configuration enables power conversion efficiency (PCE) surpassing the theoretical limits of single‐junction cells. However, wide bandgap (WBG) perovskite films face challenges related to phase stability and open circuit voltage (VOC) deficit, particularly due to severe non‐radiative recombination at the perovskite/C60 interface. Here, the interfacial defects are passivated by incorporating a reactive passivator that reacts with lead halides to form low‐dimensional phases. The target product obtained by optimizing the reaction temperature not only suppresses recombination across the interface, but also facilitates the transfer of charge carriers. More importantly, this product can suppress phase segregation of WBG perovskite films under exposure to light illumination and moisture. This strategy enables a high VOC of 1.25 V for WBG perovskite device based on polymer hole transport layer and a certified stabilized PCE of 30.52% for a monolithic perovskite/silicon tandem solar cell. The unencapsulated tandem device retains 94% of its initial PCE over 200 h under continuous 1‐sun full spectrum illumination in air, demonstrating the improved phase stability.
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