Abstract
We present a novel approach for tuning orientation in ALD deposited ZnO nanofilm by inserting interfacial buffer layer (IBL) at interface between film and substrate, which is found to induce strong orientation and significant improvement in crystalline quality by largely decreasing grain boundary (GB) area through tailoring nucleation process. As a result, the UV emission in ZnO film with IBL is enhanced by over an order of magnitude due to the reduction of surface quenching at GB. Meanwhile, the decrease of electron scattering at GB also helps improve the electrical mobility of the film, leading to great reduction in resistivity.
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