Abstract
The photocurrent and photopotential for undoped polycrystalline diamond film electrodes prepared by chemical vapor deposition and annealed in vacuum at 1500–1640°C are measured. The “metal-like” samples (annealed at ≥1630°C) have a negligible photosensitivity. Judging from the positive sign of the photopotential and the cathodic direction of the photocurrent, the material under study formally behaves as a p-type semiconductor. The photoeffects are presumably caused by structure defects, in particular, the dislocations in diamond crystallites formed close to intercrystalline boundaries during the high-temperature annealing.
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