Abstract
Gas sensors having zinc oxide (ZnO) nanoparticles as a sensing layer are consumes low power, operates at low temperature, have great level of selectivity as well as inexpensive too. Development of nanostructured metal oxide semiconductor (MOS) for quality sensing is important. So the affect of grain size and thickness is on the sensing materials (MOS) are discussed. A simple and feasible way to synthesis zinc oxide nano particles at 900C temperature is followed. Basic requirements of chemical of this process is zinc powder, hydrogen per oxide (H2O2), and acitic acid (CH3COOH). The synthesized ZnO is deposited on silicon wafer and the characterization is done through Scanning electron microscopy (SEM) and X ray diffraction (XRD).
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