Abstract
Cu2NiSnS4 (CNTS) is considered as a promising quaternary semiconductor, suitable for absorber layer in thin film solar cells because of their non toxic and earth-abundant elements. Here, we have successfully deposited CNTS thin films onto glass substrates by the Spray Sandwich method. These thin films were only obtained at substrate temperature 300°C with 60min spray duration. The prepared CNTS thin films exhibited high absorption coefficient (∼104cm−1) in the visible region with direct band gap energy of 1.23eV, suggesting its potential use in thin film solar cells.
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