Abstract
Magnesium silicon nitride (MgSiN2) was synthesized without any additives under a nitrogen gas flow (200 mL/min) using a nitriding method. The effects of temperature and holding time on its purity and morphology were investigated. A single-phase MgSiN2 powder was obtained at 1350℃ for 1 h and 1250℃ for 11 h. However, the decomposition of MgSiN2 occurred at 1450℃, suggesting that the optimum temperature for the preparation of MgSiN2 from Mg-Si system was 1350℃. The phase purity, morphology, size of the product and elemental composition of the samples were detected by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy spectrometer (EDS), respectively. The evaporation of Mg and Si resulted in the formation of many voids in the blocky product. The temperature gradient promotes the growth of MgSiN2 on the surface of massive products along the tip. The concentration gradient of Mg and Si vapors in the void resulted in the columnar growth of MgSiN2.
Highlights
In recent years, ternary nitrides have been widely investigated due to their higher functionality than binary nitrides. β-SiAlON, Si3N4, and AlN all exhibit excellent thermal performances [1]-[7]
The phase purity, morphology, size of the product and elemental composition of the samples were detected by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy spectrometer (EDS), respectively
In view of its theoretical thermal conductivity value of up to 75 W/m·K, MgSiN2 should replace the AlN material as a new generation of ceramic materials with high thermal conductivity [14]. It can be used as substrate material, packaging material, fluorescent material, for sintering aid of non-oxide ceramics with high thermal conductivity, and as growth additive in the combustion synthesis of β-Si3N4 rod crystals
Summary
Ternary nitrides have been widely investigated due to their higher functionality than binary nitrides. β-SiAlON, Si3N4, and AlN all exhibit excellent thermal performances [1]-[7]. In view of its theoretical thermal conductivity value of up to 75 W/m·K, MgSiN2 should replace the AlN material as a new generation of ceramic materials with high thermal conductivity [14] It can be used as substrate material, packaging material, fluorescent material, for sintering aid of non-oxide ceramics with high thermal conductivity, and as growth additive in the combustion synthesis of β-Si3N4 rod crystals. It is considered a very promising engineering and functional ceramic material [15]-[25]
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