Abstract
PtS2, a group-10 transition metal dichalcogenide, has prominent layer-depended band structure, and can enable extremely high phonon-limited mobility at room temperature. Here, we demonstrate the theoretical study on the electronic band structures of PtS2 with different thickness by using density functional theory (DFT), as well as experimental realization of large-area synthesis of few-layer PtS2 film by direct sulfurization of pre-deposited Pt. The synthetic process suggested that the reaction pressure is a key factor in the formation of high-quality PtS2 semiconducting films. Characterizations with atomic force microscopy (AFM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) have indicated that good film stoichiometry and uniformity have been achieved. Furthermore, field-effect transistor (FET) arrays were fabricated based on the large-scale PtS2 film, exhibiting well-uniform electrical performance with p-type transport behavior. These results can open up an attractive approach to promote the large-scale applications of PtS2 in advanced nanoelectronics and optoelectronics devices and systems.
Highlights
Two-dimensional (2D) layered materials such as graphene,1 transition metal dichalcogenides (TMDCs),2–4 and black phosphorus (BP)5 have attracted considerable attention in recent years due to their unique structures and novel physical properties
The film quality of our chemical vapor deposition (CVD) PtS2 film is not as ideal as the reported flakes prepared by using chemical vapor transport (CVT) and mechanical exfoliation,14,15 our synthesis approach demonstrated here still provides an alternative way towards large-area PtS2 for device integration as well as material property studies
Large-area synthesis has been achieved by direct sulfurization of pre-deposited Pt films
Summary
Two-dimensional (2D) layered materials such as graphene, transition metal dichalcogenides (TMDCs), and black phosphorus (BP) have attracted considerable attention in recent years due to their unique structures and novel physical properties. TMDCs are of great interest owing to their sizable bandgap and rich materials types, exhibiting huge potential for a variety of applications, including nanoelectronics and optoelectronics.. TMDCs have the formula of MX2, where M is a transition metal, and X denotes a chalcogen (S, Se, or Te). Most research have been focusing on group-6 TMDCs such as MoS2 and WSe2. Another interesting subcategory is the group-10 TMDCs which can exhibit very high phonon-limited mobility at room temperature as demonstrated by theoretical calculation.. Another interesting subcategory is the group-10 TMDCs which can exhibit very high phonon-limited mobility at room temperature as demonstrated by theoretical calculation. the material properties of these TMDs have been studied decades ago, their 2D nature and electronic device applications have not been experimentally investigated
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