Abstract
The photophysical characteristics of phosphorescent Ir(III) complexes 1–3 were investigated to determine their suitability as candidates for green light-emitting materials for OLEDs. To evaluate the EL properties of using these compounds as dopant in the emitting layer, multilayered devices were designed as green-light-emitting device having the following configuration: ITO/NPB (30 nm)/Ir(III) complexe 1 (5 and 10 wt.%) doped in CBP (30 nm)/BCP (10 nm)/Alq3 (40 nm)/Liq/Al were fabricated. An OLED device employing 1 as a dopant exhibits the performance with a maximum luminance of 46000 cd/m2 at 14.0 V. The luminous efficiency, power efficiency were 17.3 cd/A, 6.97 lm/W at 20 mA/cm2, respectively. Also, this device shows green emission with CIE coordinates of (0.247, 0.594) at 10.0 V.
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