Abstract
Large-area P-N heterojunction organic semiconductor nanowire combined (4-hexyloxybenzoyl)butylsaure methyl amide (H-t-B) and Poly (3-hexylthiophene) (P3HT) were fabricated and the morphology and photoelectric properties were investigated by the growth of composition. The performance of light on/off switching of the H-t-B/P3HT heterojunction nanowire arrays was measured by the light irradiation on and off, the current in the devices showed two distinct states, the current was only 0.34 μA in the dark, while the current can reach 1.37 μA under the illumination of 45 mW/cm(2). The on/off switching ratio for the device of the heterojunction nanowire arrays is about 4.03.
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