Synthesis, characterization and dielectric properties of SnO2 thin films

Abstract

SnO2 thin films have been grown on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature and ambient pressure. The annealing temperature effect on the structural, morphological, optical and electrical properties of SnO2 thin films has been investigated. The X-ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) studies have showed that all the films have exhibited polycrystalline nature with tetragonal structure and have been covered well on glass substrates. The crystalline and surface properties of the films have improved with increasing annealing temperature. The band gap values have been changed from 3.73 to 3.66eV depending on the annealing temperature. The refractive index (n), optical static and high frequency dielectric constants (εo, ε∞) values have been calculated as a function of the annealing temperature. The resistivity values of the films have changed between 10−1 – 10−3Ωcm with annealing temperature and light at room temperature.