Abstract
SrTiO3−xNy/SrTiO3−δ layered structures were synthesized from single crystals of SrTiO3 (1 0 0) by ammonolysis using a microwave-induced plasma (MIP). Samples prepared using a low ammonia flow rate (50–100 mL min−1) gave nanocrystals of TiN at the surface, while the samples prepared in an ammonia flow in the range 125–175 mL min−1 did not show impurity phases. Electrical resistance measurements of SrTiO3−xNy/SrTiO3−δ single crystals show metallic-like behaviour in the temperature range 2–300 K, with a residual resistance ratio R(300 K)/R(4.2 K) of ca 50. The Hall mobility follows the power law μH ∝ T−2.3 in the temperature range 150–300 K, which is attributed to n-type charge carriers.
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