Abstract
Dithienothiasiline (DTTS), in which two thiophene rings are linked by sulfur and silicon atoms at the α,α‘- and β,β‘-positions of the thiophenes, respectively, was prepared. From the results of optical and electrochemical experiments, it was found that the band gap and HOMO energy level became larger and lower, respectively, as the bridging sulfur atom of DTTS was oxidized step-by-step by mCPBA (m-chloroperoxybenzoic acid). DTTSs substituted with trimethylsilyl, methylthio, and thienyl groups at α,α‘-positions and a polymer containing DTTS and a sulfur atom as repeating components were prepared, and their electronic and electrochemical properties were investigated. When DTTSs and poly(DTTS sulfide) were introduced as hole-transporting materials in EL devices with the structure of ITO/DTTS or polymer/Alq3/Mg−Ag, the maximum luminance of 4280 cd/m2 derived from an Alq3 emission was achieved. A film of poly(DTTS sulfide) became conducting upon doping with FeCl3 with a conductivity of 1.6 × 10-3 S/cm.
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