Abstract
Gallium phosphide (GaP) nanowires were synthesized by heatingGa2O3 and red phosphor powders. The GaP nanowires have diameters from to nm and length up to several micrometres. The nanowires with diameters nm are usually straight and partly covered by some thin wires on the clean surface.However, the curving wires with diameters from to nm usually twist around each other. All the GaP nanowires investigated have orientation with structure defects such as twins. Photoluminescence spectrummeasurement reveals an obvious redshift and holds promise for some potential applicationin optical nanodevices in the future.
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