Abstract
ABSTRACTEr-doped GaN rod-shaped low-dimensional structures have been synthesized on the surface of a silicon (001) substrate by the direct reaction of Ga, NH3 and Er using a catalyst-assisted chemical vapor deposition technique. The low-dimensional nanostructures were characterized spectrocopically analyzing the hypersensitive4G11/2and2H11/2bands of Er3+located at 375 and 425 nm, respectively. Green and near-infrared (IR) emission produced by these Er-doped GaN low-dimensional structures has been observed under excitation at 488 and 543 nm in a confocal microscope.
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