Abstract
A synchrotron radiation (SR) photoemission study on the valence band of the Pd/GaAs (110), Pd/InP (110), Pd/InSb (110) and Pd/PbS (100) systems has been presented. It was observed in the study that at Pd coverages ranging from 0.2 to 40 Å, all of the valence bands of the interface systems are composed of a main structure characterizing the Pd 4 d band, and a shoulder near the Fermi level representing the antibonding states coming from the interaction of Pd with the substrates. With increasing Pd coverages, the main peak in the valence bands developed gradually into the bulk Pd 4 d band, and the shoulder appeared to merge into the main band. Two interfaces processes, namely surface segregation and chemical interaction, have been investigated for the interface systems with the help of peak decomposition and curve fitting for the Pd 4 d band, which revealed the evolution of the band shape parameters at various coverages. It is found that for the semiconductor substrate with more reactive anions, chemical interaction will dominate the interface processes at the first stage of interface formation.
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