Abstract
Synapse is one of the key components of brain nervous system. As the fourth electronic component, memristor can be used to act as synaptic device and construct bionic neural network, in which the synapses can be stimulated by either electrical excitation or optical irradiation. Up to now, there have been many researches on the optoelectronic synaptic devices and the main functional materials include binary oxides, perovskite complex oxides, solid electrolytes, organic and polymer materials, etc. Here, we report anoptoelectronic synaptic device based on SnO<sub>2</sub>monolayer embedded with Ag nanocrystals and structured as ITO/SnO<sub>2</sub>:Ag/p++-Si. It is found that the SnO2:Ag thin film can effectively absorb light illumination in the broadband range of 450 nm to 635 nm, and that the device has been successfully simulated with multiple synaptic behaviors in the broadband range, including excitatory postsynaptic current (EPSC), paired pulse facilitation (PPF) and the transition from short-term plasticity (STP) to long-term plasticity (LTP). Our newly developed optoelectronic synapse device shows great application potential in neuromorphological computing.
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