Switching the electrical characteristics of TiO2 from n-type to p-type by ion implantation

Abstract

For many applications, as for example tandem dye-sensitized solar cells (DSSCs), the development of transparent p-type semiconductor with good charge transport properties is crucial. In this work, a nitrogen-doped TiO2 material is transformed by ion implantation into an efficient hole transport layer that could reduce the electron-hole recombination processes in the devices. Theoretical calculations allowed to demonstrate that the position of nitrogen species as well as their respective ratio impact the optical and electrical properties of N-doped TiO2 materials. The chemical composition was therefore tuned by the ion implantation parameters, achieving a high transparency in the UV–visible region while generating delocalized states near the top of the valence band that do not act as traps. In terms of electrical properties, beyond the possibility to tune the electrical behavior of TiO2 from n-type to p-type upon nitrogen doping, we succeed to increase the conductivity by a higher electron mobility without change in their density, which is of prime interest for charge transport application.