Abstract
Bi3.15Nd0.85Ti3O12 (BNT) thin film capacitors were fabricated using a metalorganic decomposition method, and the process of polarization reversal was investigated using a switching current testing technique. The switching time (50–600 ns) and the reversible polarization were measured at different voltages in the range 0–5 V. The effect of gas environment and annealing temperature on the switching time was systematically investigated. It was found that the switching time was not significantly affected by the annealing gas environment at 700°C, which indicates that oxygen vacancies have no influence on the switching time. However, the annealing temperature has a significant effect on the switching time. It increases with an increase in annealing temperature below 750°C, and decreases above 750°C. Several hypotheses have been given to explain this phenomenon and a growth-dominated switching process is proposed in BNT thin films.
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