Abstract
Understanding the switching mechanism of the volatile resistive switching random access memory (RRAM) device is important to harness its characteristics and further enhance its performance. Accurate modeling of its dynamic behavior is also of deep value for its applications both as selector and as short-term memory synapse for future neuromorphic applications operating in temporal domain. In this work, we investigate the switching and retention (relaxation) processes of the Ag-based metallic filamentary volatile resistive switching devices. We find that the switching process can be modeled by the ionic drift under electric field, while the retention process can be modeled by the ionic diffusion along the filament surface driven by the gradient of surface atomic concentration. Through further theoretical analysis, we also find that the ionic drift and ionic diffusion can be unified within the general Einstein relation. To confirm this relation, we collect ionic mobility and diffusivity data from the literature using the switching and retention model. Finally, we show that the read voltage dependent retention time can be explained by the competition between the ionic drift and diffusion flux.
Highlights
V OLATILE resistive switching random access memory (RRAM) devices based on silver (Ag) or copper (Cu)
This leads to emerging applications of using the volatile RRAM device as short-term synaptic or neural device in neuromorphic computation working in temporal domain [8]
Note that our model primarily aims at extracting the field-independent mobility μ0, since this is the low-field mobility that should be compared to the diffusivity within the framework of the Nernst–Einstein relation
Summary
V OLATILE resistive switching random access memory (RRAM) devices based on silver (Ag) or copper (Cu). Materials and structure engineering can be used to reduce the retention time to few microseconds [6], in most cases milliseconds or larger retention times are reported, which is similar to the timescales of short-term memory effects in biological neural systems [7]. This leads to emerging applications of using the volatile RRAM device as short-term synaptic or neural device in neuromorphic computation working in temporal domain [8]. In this work, based on the Ag filamentary volatile RRAM device and its extensive characteristics reported in the. An extensive discussion was made to state the limitation of the current model and the model’s connection with other theories about metallic filamentary RRAM devices
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