Abstract
The switching characteristics of a trench-type 4H-SiC insulated-gate bipolar transistor (IGBT) device with interface defects are analyzed up to the nonquasi-static (NQS) switching regime using reported interface density measurements and device simulation. Collector current degradation characterized by threshold voltage shift to higher gate voltages and reduction of current magnitude due to carrier trapping are observed under quasi-static (QS) simulation condition. At slow switching of the gate voltage, carrier trapping causes a hump in the transient current at the start of conduction. At very fast switching, the current hump is limited by the NQS effect which results to a reduced switching efficiency and increased on-resistance.
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