Abstract
Two switching devices with different double carrier confinement structures were fabricated. One is a GaAs switch with double InGaP barriers, another with double GaAs-InGaAs delta-doped (-doped) quantum wells. In the characteristics of the former, because of the two-step barrier lowering induced by the processes of the carrier charging to the injection junction and carrier confinement in wells, a double S-shaped negative differential resistance (NDR) phenomenon is observed after the onsets of successive avalanche multiplications. However, only a single NDR performance is obtained in the characteristics of the latter due to one-step barrier lowering, even though successive avalanche multiplications also occur in the device operation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
