Abstract
We demonstrate that In0.75Ga0.25As quantum wells can be freely suspended without losing electrical quality when the epitaxial strain-relieving buffer layer is removed. In applied magnetic fields, non-dissipative behavior is observed in the conductivity, and a current induced breakdown of the quantum Hall effect shows a lower critical current in the suspended layers due to efficient thermal isolation compared to the non-suspended-control device. Beyond the critical current, background impurity scattering in the suspended two-dimensional channel regions dominates with stochastic, resonant-like features in the conductivity. This device fabrication scheme offers the potential for thermally isolated devices containing suspension-asymmetry-induced, high spin–orbit coupling strengths with reduced electron–phonon interaction behavior but without introducing high levels of disorder in the processing.
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