Abstract
Three-dimensional integrated circuit (3DIC) technology has a greater advantage over conventional planar technology in terms of higher performance and yield. Circuits with different functions are placed on each tier. In this paper, the susceptibility of static random access memory (SRAM) which integrated with three-dimensional integrated circuit technology, are evaluated using a Monte Carlo simulation method based on the Geant4 simulation toolkit. Cross sections of single event upset (SEU) induced by different energy ions are presented. The results show that the sensitivity of each die of 3D SRAM is similar. The cross section of 3D SRAM is one order of magnitude smaller than that of the planar process due to the reduction of cell density. Additionally, the impact of TSVs on single event upset of 3D SRAM are explored using heavy ions with different energies. The high-energy ions can increase cross section of 3D SRAM due to the increase of nuclear reaction between ions and tungsten. However, the TSV filled with tungsten can shield the incident low-energy ions and decrease the cross sections.
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