Abstract
We report on the surfactant-mediated epitaxy (SME) of Si1-xGex films with x=0.23–1 on Si(001) using antimony as surfactant. We observe a transition in strain relaxation at a critical composition xT=0.58-0.66. Above this value full relaxation is achieved by a network of full edge dislocation confined to the interface in analogy to SME of pure germanium on Si(001). 100nm thick Si1−xGex films with surface roughness values less than 1nm and abrupt interfaces are obtained, as the surfactant reduces strain induced roughening and hinders interdiffusion.
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