Abstract
Using angle-resolved photoelectron spectroscopy, we investigate the electronic structure of InAs(001) surfaces having different stoichiometries, i.e. the indium rich c(8×2)/4×2 surface and the arsenic-rich c(2×8)/2×4 surface. We also compare surfaces having the same reconstructions but prepared by different techniques; by ion bombardment and annealing and by wet chemical treatment. Moreover, the surfaces are prepared on nominally undoped and n-doped InAs samples.Occupied electronic states at the Fermi level are found in all investigated cases. For the arsenic rich surfaces a single pocket of the states is found close to the Γ¯1×1 point in the reciprocal space while for the indium-rich surfaces multiple pockets of states are seen close to the Γ¯4×2 points, i.e., in accordance with periodicity of the surface. It is concluded that these states have a character of charge accumulation states (CAS), however, in the case of the indium-rich surface, the CAS are in resonance with surface states.
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