Abstract
This article presents measurements of the effective surface recombination velocity Seff at the Si–SiO2 interface of thermally oxidized p-type silicon wafers as a function of carrier injection level. The experiments cover a large range of injection levels and substrate resistivities, using the ‘‘microwave-detected photoconductance decay’’ method. A minimum in Seff has been observed experimentally. The experimental results for Seff are compared with calculations based on an extended Shockley–Read–Hall formalism which includes surface band bending effects due to oxide charges.
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