Abstract
Ultra smooth and defect-free 4H-SiC wafers are strongly demanded in the next-generation power semiconductor devices. However, such SiC substrates are relatively difficult to machine because of their mechanical hardness and marked chemical inertness. In this study, we attempt to polish 2-inch 4H-SiC wafers by our proposed method, which utilizes Fe particles and a hydrogen peroxide solution. The processed surface was observed by phase shift interferometric microscopy, Nomarski differential interference contrast microscopy and atomic force microscopy. These observational results show that the surface roughness was improved over the entire 2-inch wafer by our proposed method. These results offer useful information for preparing a smooth SiC wafer.
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